VAPOR GROWTH DEVICE OF FLUORESCENT SiC MATERIAL AND VAPOR GROWTH METHOD OF FLUORESCENT SiC MATERIAL

摘要

PROBLEM TO BE SOLVED: To provide a vapor growth device of fluorescent SiC material and a vapor growth method of fluorescent SiC material, capable of controlling a difference between donor impurity concentration and acceptor impurity concentration in fluorescent SiC accurately.;SOLUTION: In a vapor growth method of a fluorescent SiC material provided when Si and C sublimate a crystalline raw material solid in a container, and when at least one of donor impurity and acceptor impurity introduces an impurity raw material gas into the container, during vapor growth of the fluorescent SiC material, partial pressure of the impurity raw material gas in the container is adjusted continuously to approach a target partial pressure, based on the partial pressure of the impurity raw material gas detected in the container during growth of the fluorescent SiC material, and the target partial pressure of the impurity raw material gas at which the difference of concentration of the donor impurity and acceptor impurity in the fluorescent SiC material after growth becomes a predetermined target value.;SELECTED DRAWING: Figure 5;COPYRIGHT: (C)2017,JPO&INPIT