In-Cu ALLOY SPUTTERING TARGET AND PRODUCTION METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide an In-Cu alloy sputtering target member having high composition uniformity in the thickness direction.SOLUTION: There is provided a sputtering target member having a composition containing Cu as much as 1-70 atom% to the total atomic number of In and Cu, and comprising residue In and inevitable impurities. In the sputtering target member, assuming that an atomic concentration of Cu to the total atomic number of In and Cu in one half in the thickness direction is A, and that an atomic concentration of Cu to the total atomic number of In and Cu in the other half in the thickness direction is B, and that B≥A is satisfied, 0.95≤A/B≤1 is satisfied, and the number of voids having the size of 100 μm or more is below 10/cmin average.SELECTED DRAWING: Figure 1