METHOD FOR PROGRAMMING ANTI-FUSE TYPE ONE-TIME PROGRAMMABLE MEMORY CELL

摘要

PROBLEM TO BE SOLVED: To provide a method for programming an anti-fuse type OTP memory cell.SOLUTION: A first program voltage Vp1 is given to a gate terminal of an anti-fuse transistor. A first bit line voltage Vb1 is transferred to an anti-fuse transistor Taf. A first voltage stress with a first polarity is given to a gate oxide layer of the anti-fuse transistor Taf and a weak route is formed between the gate terminal and a first drain/source terminal of the anti-fuse transistor. A second program voltage is given to the gate terminal of the anti-fuse transistor. A second bit line voltage is transferred to the anti-fuse transistor. A second voltage stress with a second polarity is given to the gate oxide layer of the anti-fuse transistor. As a result, a program current is generated along the weak route and the gate oxide layer is broken on the first drain/source terminal.SELECTED DRAWING: Figure 4A