Production process of high electron mobility transistor on domain inverted substrate by layer transfer

摘要

The method includes forming a barrier layer on a polar compound semiconductor layer on a sacrificial substrate and bonding the sacrificial substrate to a carrier substrate to form a composite structure, wherein the barrier layer comprises a polar compound semiconductor layer And separating the sacrificial substrate from the composite structure to expose the polar compound semiconductor layer; and forming at least one circuit element. The device includes a barrier layer on a substrate, a transistor element on the barrier layer, and a polar compound semiconductor layer disposed between the barrier layer and the transistor element, wherein the polar compound semiconductor layer has two-dimensional electrons Including gas.