High-density SRAM array design with skipped interlayer conductive contacts

摘要

A static random access memory (SRAM) cell includes a first conductive layer including word line landing pads extending into neighboring memory cells in adjacent rows of the memory array. The word line landing pads in the first conductive layer are electrically isolated from all the gate contacts of neighboring memory cells. The SRAM cell also includes a second conductive layer including a word line coupled to a word line landing pad in the first conductive layer. The SRAM cell further includes a first via coupling the gate contact of the pass transistor gate in the SRAM cell to the word line landing pad in the first conductive layer. The SRAM cell also includes a second via which couples the word line landing pad and the word line of the second conductive layer.