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Method for producing a plasma etching apparatus for components and plasma etching equipment parts for

机译:用于部件的等离子蚀刻设备的制造方法以及用于等离子蚀刻设备的部件

摘要

The present invention provides a plasma etching apparatus component 1 includes a base material 10 and an yttrium oxide coating 20 formed by an impact sintering process and configured to cover a surface of the base material. The yttrium oxide coating 20 contains at least one of particulate portions and non-particulate portions. The yttrium oxide coating 20 has a film thickness of 10 μm or above and a film density of 90% or above. The particulate portions have an area coverage ratio of 0 to 80% and the non-particulate portions have an area coverage ratio of 20 to 100%.
机译:本发明提供了一种等离子体蚀刻设备部件1,其包括基材10和通过冲击烧结工艺形成并被构造为覆盖基材表面的氧化钇涂层20。氧化钇涂层20包含颗粒部分和非颗粒部分中的至少之一。氧化钇涂层20的膜厚度为10μm以上,膜密度为90%以上。颗粒部分的面积覆盖率为0至80%,非颗粒部分的面积覆盖率为20至100%。

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