Electronic device comprising an n-type superlattice and a p-type superlattice

摘要

A superlattice and a method of forming the superlattice are disclosed. In particular, an engineered layered single crystal structure forming a superlattice is disclosed. The superlattice provides p-type conductivity or n-type conductivity and includes a host layer and an impurity layer alternately. The host layer consists essentially of a semiconductor material, and the impurity layer consists essentially of a corresponding donor or acceptor material.