Chemical mechanical polishing method using the chemical mechanical polishing slurry, and the slurry

摘要

PROBLEM TO BE SOLVED: To provide: a slurry for chemical mechanical polishing, excellent in performance for flattening a film to be polished and ability for removing an excessive insulating film, specifically the slurry being suitable for eliminating level difference formed between an insulating film formed of silicon oxide or the like and a stop film formed of silicon nitride or the like, in a shallow groove element separation process; and a chemical mechanical polishing method using the slurry.SOLUTION: A slurry for chemical mechanical polishing contains: an abrasive grain (a); a water soluble polyurethane (b) having both of a carboxyl group and a polyoxyethylene group having 4 or more repeating units; and water.