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Oxygenated ScN crystal thin film, manufacturing method thereof, electrode and electronic device

机译:氧化ScN晶体薄膜,其制造方法,电极和电子设备

摘要

PROBLEM TO BE SOLVED: To provide an oxygen-added ScN crystal thin film, which can attain highly reproducibly the electric characteristics of an electronic mobility of 90 (cm/V sec) or more, an electron density of 1×10(cm) or more, which is high in light transmissivity, and which is excellent in surface stability, and provide a manufacturing method thereof, an electrode and an electric device.SOLUTION: An oxygen-added ScN crystal thin film is characterized in that oxygen is added, and in that the addition of oxygen is 1×10(cm) or more and 1×10(cm) or less.
机译:解决的问题:提供一种加氧的ScN晶体薄膜,该薄膜可高度再现地获得90(cm / V sec)或更高的电子迁移率,1×10(cm)或更高的电子密度的电学特性。此外,本发明提供了一种氧添加的ScN晶体薄膜,其特征在于,所述氧的添加率高,并且其表面稳定性优异,并且提供了其制造方法,电极和电子器件。氧的添加量为1×10(cm)以上且1×10(cm)以下。

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