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Low dielectric constant dielectric protective spacer for forming through-substrate via pattern in low dielectric constant wiring layer
Low dielectric constant dielectric protective spacer for forming through-substrate via pattern in low dielectric constant wiring layer
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机译:用于在低介电常数布线层中形成贯穿衬底的通孔图案的低介电常数介电保护隔离物
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摘要
A low-K value dielectric protection spacer for patterning through substrate vias (TSVs) through a low-K value wiring layer. A method for forming a low-K value dielectric protection spacer includes etching a via opening through a low-K value dielectric interconnect layer. A protective layer is deposited in the via opening and on the low-K value dielectric interconnect layer. At least a portion of the protective layer is etched from the bottom of the via opening and from a horizontal surface of the low-K value dielectric interconnect layer. The etching leaving a protective sidewall spacer on a sidewall of the via opening. A through substrate via is etched through the bottom of the via opening and through the semiconductor substrate. The through substrate via is filled with a conductive material.
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