Low temperature silicon nitride film using remote plasma CVD technology

摘要

Embodiments of the present invention generally provide a method for forming a silicon nitride layer on a substrate. In one embodiment, a method of forming a silicon nitride layer using remote plasma chemical vapor deposition (CVD) at a temperature below 300 degrees Celsius is disclosed. Precursors for remote plasma CVD processes include tris (dimethylamino) silane (TRIS), dichlorosilane (DCS), trisilylamine (TSA), bis-t-butylaminosilane (BTBAS), hexachlorodisilane (HCDS), Alternatively, hexamethylcyclotrisilazane (HMCTZ) is included. [Selection] Figure 1