首页> 外国专利> NANOSCALE HIGH-PERFORMANCE TOPOLOGICAL INDUCTOR

NANOSCALE HIGH-PERFORMANCE TOPOLOGICAL INDUCTOR

机译:纳米级高性能拓扑感应器

摘要

An electrical device includes a current transport layer made of an anomalous Hall material. The electrical device also includes a first ferromagnetic island in physical contact with the current transport layer and a second ferromagnetic island in physical contact with the current transport layer, the second ferromagnetic island oriented with respect to the first ferromagnetic island such as to concentrate a magnetic field, generated by current flow along a conducting surface of the anomalous Hall material, over the first ferromagnetic island and the second ferromagnetic island.
机译:电气设备包括由异常霍尔材料制成的电流传输层。电气设备还包括与电流传输层物理接触的第一铁磁岛和与电流传输层物理接触的第二铁磁岛,第二铁磁岛相对于第一铁磁岛定向以便集中磁场由电流沿着异常霍尔材料的导电表面在第一铁磁岛和第二铁磁岛上方流动而产生的电流。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号