RAPID HEATING PROCESS IN THE PRODUCTION OF SEMICONDUCTOR COMPONENTS

摘要

A method for monitoring a rapid heating process to which a semiconductor wafer is subjected includes performing the heating process for a region of the semiconductor wafer, irradiating the semiconductor wafer with a laser beam, detecting light of the laser beam that is reflected from the semiconductor wafer, creating haze data based on the detected light and determining heated regions and/or transition regions between heated and non-heated regions of the semiconductor wafer on the basis of the haze data.