首页>外文会议>Advanced Thermal Processing of Semiconductors (RTP), 2005 13th International Conference on

Advanced Thermal Processing of Semiconductors (RTP), 2005 13th International Conference on

召开年：
召开地：Santa Barbara,CA
出版时间：-

会议文集：-

会议论文

热门论文

全部论文

全选（0）

1.Optimization in vacuum photothermal processing (VPP)

机译：优化真空光热处理（VPP）
- 作者：Axelevitch;A.;Golan;G.;Gorenstein;B.
- 会议名称：《Advanced Thermal Processing of Semiconductors (RTP), 2005 13th International Conference on》 | 2005年
2.Ni/sub 2/Si and NiSi formation by low temperature soak and spike RTPs

机译：通过低温浸泡和尖峰RTP形成Ni / sub 2 / Si和NiSi
- 作者：Eun-Ha Kim;HaIi Forstner;H.;Foad;M.;Tam;N.;Ramamurthy;S.;Griffin;P.B.;Plummer;J.D.
- 会议名称：《Advanced Thermal Processing of Semiconductors (RTP), 2005 13th International Conference on》 | 2005年
3.Multiple reflection effects during the in-situ calibration of an emissivity independent radiation thermometer

机译：独立于发射率的辐射温度计原位校准期间的多重反射效应
- 作者：Brosilov;B.J.;Naor;Y.;Baharav;Y.
- 会议名称：《Advanced Thermal Processing of Semiconductors (RTP), 2005 13th International Conference on》 | 2005年
4.Plasma doping and subsequent rapid thermal processing for ultra shallow junction formation

机译：等离子体掺杂和随后的快速热处理，以形成超浅结
- 作者：Mizuno;B.;Sasaki;Y.;Cheun-Guo Jin;Tamura;H.;Okashita;K.;Sauddin;H.;Ito;H.;Tsutsui;K.;Iwai;H.
- 会议名称：《Advanced Thermal Processing of Semiconductors (RTP), 2005 13th International Conference on》 | 2005年
5.Long pulse laser thermal processing: annealing duration trade-off for next generation semiconductor hot processes

机译：长脉冲激光热处理：下一代半导体热工艺的退火时间权衡
- 作者：Venturini;J.
- 会议名称：《Advanced Thermal Processing of Semiconductors (RTP), 2005 13th International Conference on》 | 2005年
6.Near-ideal implanted shallow-junction diode formation by excimer laser annealing

机译：准分子激光退火形成近乎理想的植入浅结二极管
- 作者：Gonda;V.;Burtsev;A.;Scholtes;T.L.M.;Nanver;L.K.
- 会议名称：《Advanced Thermal Processing of Semiconductors (RTP), 2005 13th International Conference on》 | 2005年
- CMOS integrated circuits;
- CVD coatings;
- aluminium;
- arsenic;
- boron compounds;
- contact resistance;
- etching;
- ion implantation;
- laser beam annealing;
- semiconductor diodes;
- silicon;
- silicon compounds;
- surface roughness;
- 50 nm;
- Al-SiO/sub 2/;
- As/sup +/ implant;
- BF/sub 2//sup;
7.Physical aspects of particle deposition in RTP

机译：RTP中粒子沉积的物理方面
- 作者：Schmid;P.;Frigge;S.;Huelsmann;Th.;Nadig;B.;Nenyei;Z.;Reisdorf;R.
- 会议名称：《Advanced Thermal Processing of Semiconductors (RTP), 2005 13th International Conference on》 | 2005年
8.Rad-Pro: effective software for modeling radiative properties in rapid thermal processing

机译：Rad-Pro：在快速热处理过程中建模辐射特性的有效软件
- 作者：Lee;B.J.;Zhang;Z.M.
- 会议名称：《Advanced Thermal Processing of Semiconductors (RTP), 2005 13th International Conference on》 | 2005年
9.Non-contact characterization of several silicon oxides oxynitrides grown by rapid thermal processing

机译：通过快速热处理生长的几种氮氧化硅的非接触特性
- 作者：Storbeck;O.;Hayn;R.;Pethe;W.
- 会议名称：《Advanced Thermal Processing of Semiconductors (RTP), 2005 13th International Conference on》 | 2005年
10.Suppression of thermal interface degradation in high-k film/Si by helium

机译：氦抑制高k膜/ Si中的热界面降解
- 作者：Muraoka;K.
- 会议名称：《Advanced Thermal Processing of Semiconductors (RTP), 2005 13th International Conference on》 | 2005年
11.Advanced process control in RTP using the 'relative power'

机译：使用“相对功率”的RTP中的高级过程控制
- 作者：Gutt;T.
- 会议名称：《Advanced Thermal Processing of Semiconductors (RTP), 2005 13th International Conference on》 | 2005年
12.Novel fabrication process to realize ultra-thin (EOT = 0.7 nm) and ultra-low-leakage SiON gate dielectrics

机译：实现超薄（EOT = 0.7 nm）和超低泄漏SiON栅极电介质的新颖制造工艺
- 作者：Matsushita;D.
- 会议名称：《Advanced Thermal Processing of Semiconductors (RTP), 2005 13th International Conference on》 | 2005年
13.The accurate modeling of temperature response of semiconductor production wafers during rapid thermal processing

机译：快速热处理过程中半导体生产晶圆的温度响应的精确建模
- 作者：Lojek;B.
- 会议名称：《Advanced Thermal Processing of Semiconductors (RTP), 2005 13th International Conference on》 | 2005年
14.Temperature and doping dependence of the radiative properties of silicon: Drude model revisited

机译：温度和掺杂对硅辐射特性的依赖性：重新探讨了Drude模型
- 作者：Lee;B.J.;Zhang;Z.M.
- 会议名称：《Advanced Thermal Processing of Semiconductors (RTP), 2005 13th International Conference on》 | 2005年
15.Advanced activation and stability of ultra-shallow junctions using flash-assisted RTP

机译：使用闪光辅助RTP的超浅结的高级激活和稳定性
- 作者：Gelpey;J.;McCoy;S.;Lerch;W.;Paul;S.;Niess;J.;Cristiano;F.;Bolze;D.
- 会议名称：《Advanced Thermal Processing of Semiconductors (RTP), 2005 13th International Conference on》 | 2005年
16.Process influences on the microstructural and electrical properties of rapid thermal chemical vapor deposited polysilicon

机译：工艺对快速热化学气相沉积多晶硅的微观结构和电性能的影响
- 作者：Nakos;J.
- 会议名称：《Advanced Thermal Processing of Semiconductors (RTP), 2005 13th International Conference on》 | 2005年
17.Temperature non-uniformity from combined conduction and radiation heat transfer within a doped wafer

机译：掺杂晶片内传导和辐射传热结合产生的温度不均匀性
- 作者：Asano;A.;Pei-feng Hsu;Lojek;B.
- 会议名称：《Advanced Thermal Processing of Semiconductors (RTP), 2005 13th International Conference on》 | 2005年
18.The FDTD computation of electromagnetic wave scattering from surfaces

机译：从表面散射电磁波的FDTD计算
- 作者：Kang Fu;Pei-feng Hsu
- 会议名称：《Advanced Thermal Processing of Semiconductors (RTP), 2005 13th International Conference on》 | 2005年
19.Advanced thermal processing of semiconductor materials in the msec-range

机译：毫秒级范围内的半导体材料的先进热处理
- 作者：Skorupa;W.;Yankov;R.A.;Voelskow;M.;Anwand;W.;Panknin;D.;McMahon;R.A.;Smith;M.;Gebel;T.;Rebohle;L.;Fendler;R.;Hentsch;W.
- 会议名称：《Advanced Thermal Processing of Semiconductors (RTP), 2005 13th International Conference on》 | 2005年
20.CMOS challenges of keeping up with Moore''s Law

机译：追随摩尔定律的CMOS挑战
- 作者：Orlowski;M.
- 会议名称：《Advanced Thermal Processing of Semiconductors (RTP), 2005 13th International Conference on》 | 2005年
21.Synthesis and Control of Ultra Thin Gate Oxides for the 90 and 65 NM Nodes

机译：90和65 NM节点的超薄栅极氧化物的合成与控制
- 作者：Shepard;J.F.;Chou;A.;Chudzik;M.;Collins;C.;Freiler;M.;Wei He;Kirsch;P.;Loebl;A.;Mo;R.;Ronsheim;P.;Rottenkolber;E.;Wenjuan Zhu
- 会议名称：《Advanced Thermal Processing of Semiconductors (RTP), 2005 13th International Conference on》 | 2005年
22.SiON Gate Dielectric Formation by Rapid Thermal Oxidation of Nitrided Si

机译：氮化硅快速热氧化形成SiON栅介质
- 作者：Everaert;J.-L.;Conard;T.;Schaekers;M.
- 会议名称：《Advanced Thermal Processing of Semiconductors (RTP), 2005 13th International Conference on》 | 2005年
23.Combination of Plasma Doping and Flash anneal RTP for 45nm CMOS node

机译：等离子掺杂和Flash退火RTP的组合，用于45nm CMOS节点
- 作者：Lallement;F.;Lenoble;D.
- 会议名称：《Advanced Thermal Processing of Semiconductors (RTP), 2005 13th International Conference on》 | 2005年
24.High Productivity Single Wafer Radical Oxidation System

机译：高生产率单晶片自由基氧化系统
- 作者：Yokota;Y.;Tjandra;A.;Kai Ma;Sanaka;M.;Moritz;K.;Sharma;R.S.;Forstner;H.
- 会议名称：《Advanced Thermal Processing of Semiconductors (RTP), 2005 13th International Conference on》 | 2005年
25.Superior Spike Annealing Performance in 65nm Source/Drain Extension Engineering

机译：在65nm源/漏扩展工程中具有出色的峰值退火性能
- 作者：Li;C.I.;Chin Cheng Chien;Huang;K.T.;Po Yuan Chen;Hsiang Ying Wang;Tzou;S.F.;Chen;S.;Lin;J.;Fu;T.;Tandjaja;R.;Ramamurthy;S.;Chung;E.;Chuang;J.;Wen-Shan Chen
- 会议名称：《Advanced Thermal Processing of Semiconductors (RTP), 2005 13th International Conference on》 | 2005年
26.Low Temperature Copper De-Oxidation

机译：低温铜脱氧
- 作者：Funk;K.;Zutphen;A.V.;Granneman;E.H.A.;Basol;B.;Bradley;S.
- 会议名称：《Advanced Thermal Processing of Semiconductors (RTP), 2005 13th International Conference on》 | 2005年
27.The Determination of Annealing Program for NiSi Formation

机译：NiSi形成退火程序的确定
- 作者：Yi Wei Chen;Chiang;H.;Hsieh;K.;Tzung Yu Huang;Yu Lang Chang;Chien Chung Huang;Tzou;S.F.
- 会议名称：《Advanced Thermal Processing of Semiconductors (RTP), 2005 13th International Conference on》 | 2005年
28.Multi-scale simulation of ultra-fast radiation anneal processes for robust process implementation

机译：超快速辐射退火过程的多尺度仿真，可实现可靠的过程
- 作者：Knutson;K.;Hwang;J.;James;R.;Keys;P.;Talukdar;S.;Cea;S.
- 会议名称：《Advanced Thermal Processing of Semiconductors (RTP), 2005 13th International Conference on》 | 2005年
29.Infrared emittance measurements at NIST

机译：NIST的红外发射率测量
- 作者：Hanssen;L.M.;Tsai;B.K.;Mekhontsev;S.N.
- 会议名称：《Advanced Thermal Processing of Semiconductors (RTP), 2005 13th International Conference on》 | 2005年
30.SiON gate dielectric formation by rapid thermal oxidation of nitrided Si

机译：通过氮化硅的快速热氧化形成SiON栅极电介质
- 作者：Everaert;J.L.;Conard;T.;Schaekers;M.
- 会议名称：《Advanced Thermal Processing of Semiconductors (RTP), 2005 13th International Conference on》 | 2005年
31.Importance of heat-up ramp rate for palladium-silicide fully-silicided-gate structure formation

机译：升温速率对硅化钯全硅化栅结构形成的重要性
- 作者：Sano;K.;Hosoi;T.;Shibahara;K.
- 会议名称：《Advanced Thermal Processing of Semiconductors (RTP), 2005 13th International Conference on》 | 2005年
- CMOS integrated circuits;
- annealing;
- chemical interdiffusion;
- impurities;
- palladium compounds;
- semiconductor doping;
- specific heat;
- thin films;
- voids (solid);
- work function;
- Pd/sub 2/Si;
- Si-SiO/sub 2/-Si-Pd;
- annealing;
- diffusion;
- heat-up ramp rate;
- hot-plate heating;
- im;
32.Green laser annealing with light absorber

机译：带光吸收剂的绿色激光退火
- 作者：Shibahara;K.;Matsuno;A.;Takii;E.;Eto;T.
- 会议名称：《Advanced Thermal Processing of Semiconductors (RTP), 2005 13th International Conference on》 | 2005年
- MOSFET;
- elemental semiconductors;
- laser beam annealing;
- melting;
- molybdenum;
- rapid thermal annealing;
- reflectivity;
- silicon;
- thermal conductivity;
- thermal diffusion;
- titanium compounds;
- MOSFET;
- Si-Mo;
- Si-TiN;
- dopant activation;
- green laser annealing;
- junction depth;
- lase;
33.Pyrometry for laser annealing

机译：激光退火高温法
- 作者：Adams;B.;Mayur;A.;Hunter;A.;Ramanujam;R.
- 会议名称：《Advanced Thermal Processing of Semiconductors (RTP), 2005 13th International Conference on》 | 2005年
34.Enabling single-wafer low temperature radical oxidation

机译：实现单晶片低温自由基氧化
- 作者：Yokota;Y.;Ramamurthy;S.;Koike;K.;Izumi;K.
- 会议名称：《Advanced Thermal Processing of Semiconductors (RTP), 2005 13th International Conference on》 | 2005年
35.Manufacturability comparison of thin oxynitride films

机译：氮氧化物薄膜的可制造性比较
- 作者：Preuss;H.;Nakos;J.;Adams;E.;Burnham;J.
- 会议名称：《Advanced Thermal Processing of Semiconductors (RTP), 2005 13th International Conference on》 | 2005年
36.Calibration of a low-temperature cable-less lightpipe pyrometer on the NIST post-exposure bake test bed

机译：在NIST曝光后烘烤测试台上校准低温无电缆光导管高温计
- 作者：Tsai;B.K.;Kreider;K.G.;Kimes;W.A.
- 会议名称：《Advanced Thermal Processing of Semiconductors (RTP), 2005 13th International Conference on》 | 2005年
37.Ultra shallow junctions formed by sub-melt laser annealing

机译：通过亚熔融激光退火形成的超浅结
- 作者：Falepin;A.;Janssens;T.;Severi;S.;Vandervorst;W.;Felch;S.B.;Parihar;V.;Mayur;A.
- 会议名称：《Advanced Thermal Processing of Semiconductors (RTP), 2005 13th International Conference on》 | 2005年
- arsenic;
- boron;
- diffusion;
- electrical resistivity;
- elemental semiconductors;
- ion implantation;
- laser beam annealing;
- phosphorus;
- semiconductor doping;
- semiconductor junctions;
- silicon;
- Si wafer;
- Si:As;
- Si:B;
- Si:P;
- cooling rates;
- diffusion;
- dopants;
- junction depth measurem;