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SYSTEMS AND METHODS FOR SUB-ZERO THRESHOLD CHARACTERIZATION IN A MEMORY CELL
SYSTEMS AND METHODS FOR SUB-ZERO THRESHOLD CHARACTERIZATION IN A MEMORY CELL
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机译:记忆细胞中亚零阈值表征的系统和方法
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摘要
Systems and methods relating generally to data processing, and more particularly to systems and methods for characterizing a solid state memory. In one embodiment, the systems and methods may include programming a first cell of a solid state memory device to a negative voltage, programming a second cell of the solid state memory device to a positive voltage, wherein the second cell is adjacent to the first cell, calculating a voltage shift on the negative voltage programmed to the first cell, characterizing a shifted voltage level on the first cell as an interim voltage, and subtracting the voltage shift from the interim voltage to yield an actual voltage on the first cell.
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