首页>
外国专利>
METHODS AND APPARATUSES FOR CONTROLLING PLASMA PROPERTIES BY CONTROLLING CONDUCTANCE BETWEEN SUB-CHAMBERS OF A PLASMA PROCESSING CHAMBER
METHODS AND APPARATUSES FOR CONTROLLING PLASMA PROPERTIES BY CONTROLLING CONDUCTANCE BETWEEN SUB-CHAMBERS OF A PLASMA PROCESSING CHAMBER
展开▼
机译:通过控制等离子体处理腔室的子腔室之间的电导率来控制等离子体性质的方法和装置
展开▼
页面导航
摘要
著录项
相似文献
摘要
A plasma processing system having at least one processing chamber comprising at least two sub-chambers is provided. The two plasma sub-chambers are in plasma flow or gas flow communication through a passage, which is controlled by a gate. The gate may be operated to allow plasma migration between the two sub-chambers to occur at different conductance rates. In one example, the gate comprises two plates with openings through the plates. At least one of the plates may be rotatable relative to the other plates to govern the conductance rate of the plasma from one sub-chamber to the other sub-chamber.
展开▼