BONDING OF A HETEROGENEOUS MATERIAL GROWN ON SILICON TO A SILICON PHOTONIC CIRCUIT

摘要

A method of fabricating a heterogeneous semiconductor wafer includes depositing a III-V type semiconductor epitaxial layer on a first wafer having a semiconductor substrate. The first wafer is then bonded to a second wafer having a patterned silicon layer formed on a semiconductor substrate, wherein the III-V type semiconductor epitaxial layer is bonded to the patterned silicon layer of the second wafer. The semiconductor substrate associated with the first wafer is removed to expose the III-V type semiconductor epitaxial layer.