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Manufacturing Methods of MOSFET-Type Compact Three-Dimensional Memory
Manufacturing Methods of MOSFET-Type Compact Three-Dimensional Memory
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机译:MOSFET型紧凑型三维存储器的制造方法
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摘要
Manufacturing methods of MOSFET-type compact three-dimensional memory (3D-MC) are disclosed. In a memory level stacked above the substrate, an x-line extends from a memory array to an above-substrate decoding stage. A MOSFET-type transistor is formed on the x-line as a decoding device for the above-substrate decoding stage, where the overlap portion of the x-line with the control-line (c-line) is semi-conductive.
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机译:公开了一种MOSFET型紧凑三维存储器(3D-M C Sub>)的制造方法。在堆叠在衬底上方的存储器级中,x线从存储器阵列延伸到衬底上方的解码级。在x线上形成MOSFET型晶体管作为用于上述基板解码级的解码装置,其中,x线与控制线(c线)的重叠部分是半导电的。
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