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Method and apparatus for determining an actual junction temperature of an IGBT device
Method and apparatus for determining an actual junction temperature of an IGBT device
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机译：确定IGBT器件的实际结温的方法和装置
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摘要
The present invention relates to a method for determining an actual junction temperature (Tj) and/or an actual collector current (IC) of an IGBT device, wherein the IGBT device has a main emitter (EM) and an auxiliary emitter (EA), comprising the steps of;measuring the characteristics of an emitter voltage drop (VEE′) as a difference between a main emitter voltage (VE) at the main emitter (EM) and an auxiliary emitter voltage (VE′) at the auxiliary emitter (EA) during a switching operation of the IGBT device; anddetermining the junction temperature and/or the collector current (IC) based on the characteristics of the emitter voltage drop (VEE′).展开▼
机译：确定IGBT器件的实际结温（T j ）和/或实际集电极电流（I C ）的方法技术领域该设备具有主发射器（E M ）和辅助发射器（E A ），包括以下步骤：测量发射器电压降（V EE'）的特性，作为主发射器上的主发射器电压（V E ）之间的差（ E M ）和IGBT器件开关操作期间辅助发射极（E A ）的辅助发射极电压（V E'） ;和 ，根据发射极电压降的特性确定结温和/或集电极电流（I C ） （V EE'）。
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