METHOD AND APPARATUS FOR DETERMINING AN ACTUAL JUNCTION TEMPERATURE OF AN IGBT DEVICE

摘要

The present invention relates to a method for determining an actual junction temperature (Tj) and/or an actual collector current (Ic) of an IGBT device (2), wherein the IGBT device (2) has a main emitter (EM) and an auxiliary emitter (EA), comprising the steps of: - measuring the characteristics of an emitter voltage drop (VEE') as a difference between a main emitter voltage (VE) at the main emitter (EM) and an auxiliary emitter voltage (VE') at the auxiliary emitter (EA) during a switching operation of the IGBT device (2); and - determining the junction temperature and/or the collector current (Ic) based on the characteristics of the emitter voltage drop (VEE').