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III-V compound semiconductor device having dopant layer and method of making the same
III-V compound semiconductor device having dopant layer and method of making the same
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机译:具有掺杂剂层的III-V族化合物半导体器件及其制造方法
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摘要
A semiconductor device comprises a semiconductor substrate; a channel layer of at least one III-V semiconductor compound above the semiconductor substrate; a gate electrode above a first portion of the channel layer; a source region and a drain region above a second portion of the channel layer; and a dopant layer comprising at least one dopant contacting the second portion of the channel layer.
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