首页>
外国专利>
Process-induced asymmetry detection, quantification, and control using patterned wafer geometry measurements
Process-induced asymmetry detection, quantification, and control using patterned wafer geometry measurements
展开▼
机译:使用图案化的晶圆几何尺寸测量过程引起的不对称性检测,量化和控制
展开▼
页面导航
摘要
著录项
相似文献
摘要
Systems and methods to detect, quantify, and control process-induced asymmetric signatures using patterned wafer geometry measurements are disclosed. The system may include a geometry measurement tool configured to obtain a first set of wafer geometry measurements of the wafer prior to the wafer undergoing a fabrication process and to obtain a second set of wafer geometry measurements of the wafer after the fabrication process. The system may also include a processor in communication with the geometry measurement tool. The processor may be configured to: calculate a geometry-change map based on the first set of wafer geometry measurements and the second set of wafer geometry measurements; analyze the geometry-change map to detect an asymmetric component induced to wafer geometry by the fabrication process; and estimate an asymmetric overlay error induced by the fabrication process based on the asymmetric component detected in wafer geometry.
展开▼