Process-induced asymmetry detection, quantification, and control using patterned wafer geometry measurement

摘要

Systems and methods are disclosed for detecting, quantifying, and controlling process induced asymmetric signatures using patterned wafer geometric shape measurements. The system includes a geometric shape measurement tool configured to obtain a first set of wafer geometric shape measurements of the wafer prior to the fabrication process and to obtain a second set of wafer geometric shape measurements of the wafer after the fabrication process geometry measurement tool). The system may also include a processor in communication with the geometric shape measurement tool. The processor is configured to: calculate a geometric shape change map based on a first set of wafer geometric shape measurements and a second set of wafer geometric shape measurements; Analyze the shape change map to detect asymmetric components induced by the manufacturing process for the wafer geometry; And to estimate an asymmetric overlay error induced by the manufacturing process based on the asymmetric component detected in the wafer geometry.