Method for manufacturing a semiconductor device using tilted ion implantation processes, semiconductor device and integrated circuit

摘要

A semiconductor device includes first and second field effect transistors (FETs) formed in a semiconductor substrate having a first main surface. The first FET includes first source and drain contact grooves, each running in a first direction parallel to the first main surface, each formed in the first main surface. First source regions are electrically connected to a conductive material in the first source contact groove. First drain regions are electrically connected to a conductive material in the first drain contact groove. The second FET includes second source and drain contact grooves, each running in a second direction parallel to the first main surface, each formed in the first main surface. Second source regions are electrically connected to a conductive material in the second source contact groove, and second drain regions are electrically connected to a conductive material in the second drain contact groove.