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Magnetic read head with magnetoresistive (MR) enhancements toward low resistance X area (RA) product
Magnetic read head with magnetoresistive (MR) enhancements toward low resistance X area (RA) product
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机译:具有磁阻(MR)增强功能的磁读头,面向低电阻X区域(RA)产品
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摘要
A method of forming a magnetoresistive (MR) sensor with a composite tunnel barrier comprised primarily of magnesium oxynitride and having a MR ratio of at least 70%, resistance x area (RA) product 1 ohm-μm2, and fewer pinholes than a conventional MgO layer is disclosed. The method involves forming a Mg/MgON/Mg, Mg/MgON/MgN, MgN/MgON/MgN, or MgN/MgON/Mg intermediate tunnel barrier stack and then annealing to drive loosely bound oxygen into adjacent layers thereby forming MgO/MgON/Mg, MgO/MgON/MgON, MgON/MgON/MgON, and MgON/MgON/MgO composite tunnel barriers, respectively, wherein oxygen content in the middle MgON layer is greater than in upper and lower MgON layers. The MgON layer in the intermediate tunnel barrier may be formed by a sputtering process followed by a natural oxidation step and has a thickness greater than the Mg and MgN layers.
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