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首页> 外文期刊>Journal of Applied Physics >A novel technique to detect effects of electromagnetic interference by electrostatic discharge simulator to test parameters of tunneling magnetoresistive read heads
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A novel technique to detect effects of electromagnetic interference by electrostatic discharge simulator to test parameters of tunneling magnetoresistive read heads

机译:一种通过静电放电模拟器检测电磁干扰影响以测试隧道磁阻读取头参数的新技术

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摘要

Electrostatic discharge (ESD) has been a significant problem in the manufacturing processes of the magnetic recording head technologies for many years. Besides direct discharge damage, ESD can also generate electromagnetic interference (EMI) which could possibly cause failure in magnetic read heads. The aims of this work are to measure the EMI from ESD simulator based on the standard IEC 61000-4-2 and to investigate the effects of EMI on tunneling magnetoresistive (TMR) read heads. The discharge current and the EMI generated by ESD simulator are measured in the experiment. Also, the EMI is applied to the TMR read heads at various amplitudes and distances in order to evaluate the changes of read head parameters including the bit error rate, resistance, read back signal amplitude, and asymmetry parameter of the head. The results show that the discharge current waveform is consistent with the IEC standard current waveform. In addition, it is found that the EMI is insufficient to cause a permanent change of the read head parameters at distances above 2 cm indicating the minimal impact on the head performance. Further experiments are proposed to carry out more detailed studies of the EMI effects on head parameters in order to improve the methods to prevent the degradation of parameters which can be a latent failure in the magnetic read heads.
机译:多年来,静电放电(ESD)一直是磁记录头技术制造过程中的重要问题。除直接放电损坏外,ESD还可能产生电磁干扰(EMI),这有可能导致磁头损坏。这项工作的目的是基于标准IEC 61000-4-2来测量ESD模拟器产生的EMI,并研究EMI对隧穿磁阻(TMR)读头的影响。实验中测量了ESD模拟器产生的放电电流和EMI。而且,将EMI以各种幅度和距离施加到TMR读取头,以便评估读取头参数的变化,包括比特误码率,电阻,回读信号幅度和读取头的不对称参数。结果表明,放电电流波形与IEC标准电流波形一致。另外,发现EMI不足以引起在大于2cm的距离处的读取头参数的永久改变,这表明对头性能的最小影响。提出了进一步的实验,以对EMI对磁头参数的影响进行更详细的研究,以改进防止参数退化的方法,这些参数可能是磁读取头中的潜在故障。

著录项

  • 来源
    《Journal of Applied Physics》 |2015年第2期|17A908.1-17A908.4|共4页
  • 作者单位

    KKU-Seagate Cooperation Research Laboratory, Department of Electrical Engineering, Khon Kaen University, Khon Kaen 40002, Thailand;

    KKU-Seagate Cooperation Research Laboratory, Department of Electrical Engineering, Khon Kaen University, Khon Kaen 40002, Thailand;

    KKU-Seagate Cooperation Research Laboratory, Department of Electrical Engineering, Khon Kaen University, Khon Kaen 40002, Thailand;

    Department of Physics and Astronomy, MINT Center, University of Alabama, Tuscaloosa, Alabama 35487, USA;

    Department of Physics and Astronomy, MINT Center, University of Alabama, Tuscaloosa, Alabama 35487, USA;

    Faculty of Applied Science and Engineering, Khon Kaen University, Nong Khai Campus 43000, Thailand;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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