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NMOS LDO PSRR improvement using power supply noise cancellation

机译：使用电源噪声消除功能改善NMOS LDO PSRR

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摘要

Power-supply ripple rejection (PSRR) at high frequencies is improved for an LDO voltage regulator with an NMOS pass transistor (MN1). A ripple voltage (V_ripple) present on the input voltage causes a ripple current (I_ripple) through parasitic gate-drain capacitance of the pass transistor. A small ripple current (I_fraction) proportional to the ripple current (I_ripple) is generated and amplified to generate a cancellation current (I_cancel). The cancellation current is drawn from the gate of NMOS pass transistor (MN1) to cancel the ripple current so that no net ripple current flows through the finite output impedance of an error amplifier (2), to thereby achieve the PSRR improvement.

机译：带有NMOS传输晶体管（MN 1 ）的LDO稳压器改善了高频下的电源纹波抑制（PSRR）。输入电压上存在的纹波电压（V _{ripple ）通过传输晶体管的寄生栅极-漏极电容引起纹波电流（I _{ripple ）。产生与纹波电流（I _{ripple ）成比例的小纹波电流（I _{fraction ）并放大以产生抵消电流（I _{cancel ）。抵消电流从NMOS传输晶体管（MN 1 ）的栅极汲取，以抵消纹波电流，从而没有净纹波电流流过误差放大器的有限输出阻抗（ 2 < / B>），从而实现PSRR的改善。}}}}} 展开▼

著录项

公开/公告号US9577508B2

专利类型

公开/公告日2017-02-21

原文格式PDF

申请/专利权人 TEXAS INSTRUMENTS INCORPORATED;
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申请/专利号US201313894589

发明设计人 JIANBAO WANG;
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申请日2013-05-15

分类号H02M3/158;H02M1/15;G05F1/575;H02M1/00;

国家 US

入库时间 2022-08-21 13:43:29

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