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Process for producing, from an SOI and in particular an FDSOI type substrate, transistors having gate oxides of different thicknesses, and corresponding integrated circuit
Process for producing, from an SOI and in particular an FDSOI type substrate, transistors having gate oxides of different thicknesses, and corresponding integrated circuit
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机译:由SOI特别是FDSOI型衬底制造具有不同厚度的栅极氧化物的晶体管的方法以及相应的集成电路
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摘要
An integrated circuit includes a first zone for a first transistor and a second zone for a second transistor. The transistors are supported by a substrate of the silicon-on-insulator type that includes a semiconductor film on a buried insulating layer on a carrier substrate. In the second zone, the semiconductor film has been removed. The second transistor in the second zone includes a gate-dielectric region resting on the carrier substrate that is formed by a portion of the buried insulating layer). The first transistor in the first zone includes a gate-dielectric region formed by a dielectric layer on the semiconductor film.
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