Large-scale patterning of germanium quantum dots by stress transfer

摘要

Provided is a method for forming a two-dimensional array of semiconductor quantum confined structures. The method includes providing a layer that has first atoms and second atoms, the first atoms having a different size than the second atoms; providing an indenter template that includes at least one indenter structure extending from a surface of the indenter template; contacting the layer and the at least one indenter structure together with a pressure sufficient to generate an elastic deformation in the layer but without generating plastic deformation of the layer; annealing the layer. The contacting of the layer and the at least one indenter structure includes forming at least one quantum confined structure in the layer.