Adaptive technique for adjusting signal development across bit lines for read operation robustness in memory circuits

摘要

In one embodiment, a memory array has a pair of bit lines for each column of 1-bit SRAM cells and a word line for each row of cells, where, during a memory read operation, the bit value stored in each cell is detectable by sensing a voltage difference developed between the corresponding bit line pair. A first signal-development circuit is coupled to one bit line to accelerate draining that bit line of charge if a first bit value is stored in the cell, and a second signal-development circuit is coupled to the other bit line to accelerate draining that other bit line of charge if a second, different bit value is stored in the cell. Pulldown devices are provided to ensure that the signal-development circuit operate properly during the pre-charge and voltage difference development phases of the memory read operation, which is now faster due to the signal-development circuits.