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Reference layer for perpendicular magnetic anisotropy magnetic tunnel junction
Reference layer for perpendicular magnetic anisotropy magnetic tunnel junction
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机译:垂直磁各向异性磁隧道结的参考层
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摘要
An apparatus includes a perpendicular magnetic anisotropy magnetic tunnel junction (pMTJ) device. The pMTJ device includes a storage layer and a reference layer. The reference layer includes a portion configured to produce a ferrimagnetic effect. The portion includes a first layer, a second layer, and a third layer. The second layer is configured to antiferromagnetically (AF) couple the first layer and the third layer during operation of the pMTJ device.
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