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Off-chip distributed drain biasing of high power distributed amplifier monolithic microwave integrated circuit (MMIC) chips

机译:大功率分布式放大器单片微波集成电路(MMIC)芯片的片外分布漏极偏置

摘要

Off-chip distributed drain biasing increases output power and efficiency for high power distributed amplifier MMICs. An off-chip bias circuit has a common input for receiving DC bias current and a plurality of parallel-connected bias chokes among which the DC bias current is divided. The chokes are connected to a like plurality of drain terminals at different FET amplifier stages to supply DC bias current at different locations along the output transmission line. Off-chip distributed drain biasing increases the level of DC bias current that can be made available to the amplifier and add inductances to selected FET amplifier stages, typically the earlier stages, to modify the load impedance seen at the drain terminal to better match the amplifier stages to improve power and efficiency.
机译:片外分布式漏极偏置可提高大功率分布式放大器MMIC的输出功率和效率。片外偏置电路具有用于接收DC偏置电流的公共输入以及多个并联的偏置扼流圈,其中DC偏置电流被分流。扼流器在不同的FET放大器级连接到多个类似的漏极端子,以在沿着输出传输线的不同位置提供DC偏置电流。片外分布式漏极偏置增加了可提供给放大器的DC偏置电流的水平,并为选定的FET放大器级(通常是较早的级)增加了电感,以改变在漏极端看到的负载阻抗,从而更好地匹配放大器阶段以提高功率和效率。

著录项

  • 公开/公告号US9673759B1

    专利类型

  • 公开/公告日2017-06-06

    原文格式PDF

  • 申请/专利权人 RAYTHEON COMPANY;

    申请/专利号US201514976427

  • 发明设计人 DAVID R. FLETCHER;DAVID D. HESTON;

    申请日2015-12-21

  • 分类号H03F3/60;H03F1/02;H03F1/56;H03F3/193;

  • 国家 US

  • 入库时间 2022-08-21 13:41:56

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