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Semiconductor memory device including peripheral circuit for performing program and read opeartions and operating method thereof

机译:包括用于执行编程和读取操作的外围电路的半导体存储器件及其操作方法

摘要

A semiconductor memory device includes a memory cell array including a plurality of pages; a peripheral circuit suitable for performing a program operation and a read operation on the memory cell array; and a control logic suitable for controlling the peripheral circuit to apply first and second pass voltages respectively to first and second word lines adjacent to a selected word line during a program verify operation or the read operation.
机译:半导体存储器件包括:存储单元阵列,其包括多个页面;以及外围电路,适于对存储单元阵列执行编程操作和读取操作;控制逻辑适于在编程验证操作或读取操作期间控制外围电路以分别向与所选字线相邻的第一和第二字线施加第一和第二通过电压。

著录项

  • 公开/公告号US9558794B2

    专利类型

  • 公开/公告日2017-01-31

    原文格式PDF

  • 申请/专利权人 SK HYNIX INC.;

    申请/专利号US201514918327

  • 发明设计人 WON HEE LEE;HO SEOK LEE;

    申请日2015-10-20

  • 分类号G11C16/04;G11C7;G11C11/56;G11C16/10;G11C16/26;

  • 国家 US

  • 入库时间 2022-08-21 13:41:46

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