首页> 外国专利> Low-temperature polysilicon membrane and preparation method thereof, thin-film transistor and display device

Low-temperature polysilicon membrane and preparation method thereof, thin-film transistor and display device

机译:低温多晶硅膜及其制备方法,薄膜晶体管和显示装置

摘要

A method for preparing an LTPS membrane, including: forming an amorphous silicon (a-Si) layer (S3) on a substrate (S1) by a patterning process, in which the a-Si layer (S3) comprises a plurality of convex structures (S32) and etched areas (S31) which are disposed along circumference of the plurality of convex structures and partially etched; and performing excimer laser crystallization (ELC) on the a-Si layer (S3) and obtaining the LTPS membrane. A thin-film transistor (TFT) and a display device are further disclosed, which are used for overcoming poor uniformity of the polysilicon membrane prepared by the ELC technology.
机译:一种制备LTPS膜的方法,包括:通过构图工艺在基板(S 1 )上形成非晶硅(a-Si)层(S 3 ),其中a-Si层(S 3 )包括多个凸结构(S 32 )和蚀刻区域(S 31 ),沿所述多个凸结构的圆周设置并被部分蚀刻。在a-Si层(S 3 )上进行准分子激光结晶(ELC),得到LTPS膜。还公开了一种薄膜晶体管(TFT)和显示装置,其用于克服通过ELC技术制备的多晶硅膜的差的均匀性。

著录项

  • 公开/公告号US9559159B2

    专利类型

  • 公开/公告日2017-01-31

    原文格式PDF

  • 申请/专利权人 BOE TECHNOLOGY GROUP CO. LTD.;

    申请/专利号US201414421955

  • 发明设计人 HUIJUAN ZHANG;

    申请日2014-04-23

  • 分类号H01L21/20;H01L21/36;H01L29/04;H01L21/02;H01L29/786;H01L29/66;

  • 国家 US

  • 入库时间 2022-08-21 13:41:44

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号