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A MICRO-HALL SENSOR WITH TANGENTIAL SENSITIVITY

机译:具有切线灵敏度的微霍尔传感器

摘要

The Micro-Hall sensor with tangential sensitivity contains a semiconductor wafer (1) of mixed type conductivity, on the one side of which are formed on equal distances from each other three rectangular ohmic contacts, first (2), second (3) and third (4), placed parallel to their long sides, as the second (3) is central and juxtaposed to it on both of its long sides are placed- on the left the first (2) and on the right the third (4) contacts. To the short sides of the central contact (3) and in equal distances from it are located a batch of side ohmic contacts- third (7) and fourth (8), a power source (11) and a measurement amplifier (12). The first (2) and third (4) rectangular contacts are linked with one of the outlets of the power source (11), the other outlet of which is connected to the central contact (3). The third (7) and fourth (8) side contacts are connected with the input of the amplifier (12). The magnetic field which is being measured is in the plain of the wafer (1) and is perpendicular of the long sides of the contacts (2, 3 and 4). Two more pairs of side ohmic contacts are formed, first (5) and second (6), and fifth (9) and sixth (1), placed to the short sides of the left (2) and conversely right (4) rectangular contacts. The first (5), third (7) and fifth (9) side contacts are to one of the short sides, and the second (2), fourth (8) and sixth (10)- conversely to the other short side of the rectangular contacts (2, 3 and 4) The side contacts first (5) and sixth (10) are connected to the inlet of another measurement amplifier (13), and the second (6) and fifth (9) contacts are joint to each other. The first (5) and third (7) side contacts are joint simultaneously only with the non-inversion or only to the inversion inlets of the amplifiers (12 and 13), the outlets of which are connected to the inlet of the differential amplifier (14), whose outlet is the outlet (15) of the Hall micro-processor
机译:具有切向灵敏度的微霍尔传感器包含混合型导电性的半导体晶片(1),在其一侧以相等的距离形成三个矩形欧姆接触,即第一(2),第二(3)和第三(4),与它们的长边平行放置,因为第二个(3)位于中间并在两个长边上并列放置-在第一个(2)的左侧,在第三个(4)的右侧。在中心触点(3)的短边上,并与中心触点等距离分布的是一组侧面欧姆触点,分别是第三(7)和第四(8),电源(11)和测量放大器(12)。第一矩形触点(2)和第三矩形触点(4)与电源(11)的一个插座相连,电源的另一个插座与中央触点(3)相连。第三(7)和第四(8)侧触点与放大器(12)的输入连接。所测量的磁场位于晶片(1)的平面中,并且垂直于触点(2、3和4)的长边。形成另外两对侧面欧姆接触,第一对(5)和第二对(6),第五对(9)和第六对(1),放置在左侧(2)和右侧(4)矩形接触的短边。第一(5),第三(7)和第五(9)侧触头位于其中一个短边,而第二(2),第四(8)和第六(10)-则位于另一短边。矩形触点(2、3和4)侧面触点的第一触点(5)和第六触点(10)连接到另一个测量放大器(13)的入口,第二触点(6)和第五触点(9)分别连接其他。第一(5)和第三(7)侧面触点仅与非反相或仅与放大器(12和13)的反相入口同时连接,后者的出口连接到差分放大器的入口( 14),其出口是霍尔微处理器的出口(15)

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