首页>
外国专利>
Void forming composition, semiconductor device provided with voids formed using composition, and method for manufacturing semiconductor device using composition
Void forming composition, semiconductor device provided with voids formed using composition, and method for manufacturing semiconductor device using composition
[Problem] To provide a composition for gap formation capable of forming sacrifice areas made of a sacrificial material decomposable completely into vapor at a desired temperature, and also to provide a semiconductor device-manufacturing method using the composition. [Solution] Disclosed is a composition for gap formation comprising a polymer and a solvent: wherein said polymer comprising five or more of repeating units which are represented by at least one kind of the following formula (1) or (2): [each of Ar 1 , Ar 2 and Ar 2' is independently a substituted or unsabstituted aromatic group; and each of L 1 and L 2 is independently oxygen, sulfur, alkyl, sulfone, amide, ketone or a group represented by the following formula (3): {Ar 3 is an aromatic group; and L 3 is a trivalent atom selected from the group consisting of nitrogen, boron and phosphorus}].
展开▼
机译:[问题]提供一种用于间隙形成的组合物,该组合物能够形成由牺牲材料制成的牺牲区域,该牺牲区域可以在所需温度下完全分解成蒸气,并且还提供使用该组合物的半导体器件制造方法。 [解决方案]公开了一种用于间隙形成的组合物,其包含聚合物和溶剂:其中所述聚合物包含五个或更多个由至少一种下式(1)或(2)表示的重复单元:[Ar 1,Ar 2和Ar 2'各自独立地为取代或未取代的芳族基团; L 1和L 2各自独立地为氧,硫,烷基,砜,酰胺,酮或下式(3)表示的基团:{Ar 3是芳族基团; L 3是选自氮,硼和磷的三价原子。
展开▼