SOLAR CELL STRUCTURE AND MANUFACTURING METHOD THEREOF USING CUBIC GALLIUM NITRIDE ON GALLIUM ARSENIDE SUBSTRATES.

摘要

The present invention describes a gallium nitride solar cell structure on gallium arsenide substrates with a p-i-n-type hetero-structure, which characterizes due to being formed by (a) a GaAs layer 111 with a thickness of 1 nm to 10 nm disposed on a commercial GaAs substrate 120. (b) A p-type GaAs layer 112 with a thickness of up 100 nm to 900 nm and a carrier density in the range of up 1cm3 to 10x1019/cm3, arranged on the GaAs layer 111 cushions. (c) An un-doped intrinsic GaAs layer 113 with a thickness of up 100 nm to 2000 nm (0.1?m to 2 ?m) and a carrier density of up 1 cm3 to 10×10 16/cm3, arranged on the p-type GaAs layer 112. (d) A nucleation cubic GaN layer 114 with a thickness of up 1 nm to 10 nm, disposed on the intrinsic GaAs layer 113. And (e) an n-type cubic GaN layer 115 with a thickness of up 100 nm to 900 nm and a carrier density of up 1 cm3 to 10x1018/cm3, disposed on the cubic GaN layer 114 of nucleation.