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PLASMA CVD DEVICE AND METHOD FOR PRODUCING MAGNETIC RECORDING MEDIUM

机译:等离子体化学汽相淀积装置和制备磁记录介质的方法

摘要

A plasma CVD device includes a chamber (102), an anode (104), a cathode (103), a holding portion which holds a substrate to be deposited (101) a plasma wall (88) an anti-adhesion member (91) which is arranged between a first gap (81) between the anode and the plasma wall and a first inner surface (102a) of the chamber and a pedestal (92) which is arranged between the anti-adhesion member and a back surface of the anode and which is electrically connected to the anode. The maximum diameter of each of the first gap, a second gap (82) between the anode and the anti-adhesion member, a third gap (83) between the back surface of the anode and the pedestal, a fourth gap (84) between the plasma wall and the anti-adhesion member and a fifth gap (85) between the anti-adhesion member and the pedestal is equal to or less than 4 mm.
机译:一种等离子体CVD装置,包括:腔室(102),阳极(104),阴极(103),保持部分,该保持部分保持待沉积的衬底(101),等离子体壁(88),抗粘附构件(91)。布置在阳极与等离子体壁之间的第一间隙(81)和腔室的第一内表面(102a)之间的基座和布置在防粘构件与阳极的背面之间的基座(92)之间并且电连接到阳极。第一间隙的最大直径,阳极与防粘部件之间的第二间隙(82),阳极背面与基座之间的第三间隙(83),阳极之间的第三间隙(84)所述等离子体壁和所述防粘连件以及所述防粘连件和所述基座之间的第五间隙(85)等于或小于4mm。

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