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BROAD AREA LASER INCLUDING ANTI-GUIDING REGIONS FOR HIGHER-ORDER LATERAL MODE SUPPRESSION

机译:包含反导区域的高阶激光,用于更高阶的横向模式抑制

摘要

A broad area laser diode (10) is configured to include an anti-guiding layer (30, 60) located outside of the active region of the device. The anti-guiding layer is formed of high refractive index material that serves to de-couple unwanted, higher-order lateral modes (attributed to thermal lensing problems) from the lower-order mode output beam of output signal from the laser diode. The anti-guiding layer is formed using a single epitaxial growth step either prior to or subsequent to the steps used to grow the epitaxial layers forming the laser diode itself, thus creating a structure that provides suppression of unwanted higher-order modes without requiring a modification of specific process steps used to fabricate the laser diode itself.
机译:广域激光二极管(10)被配置为包括位于器件的有源区域之外的抗引导层(30、60)。防引导层由高折射率材料形成,该材料用于使不需要的,较高阶的横向模式(归因于热透镜问题)与激光二极管输出信号的较低阶模式输出光束分离。在用于生长形成激光二极管本身的外延层的步骤之前或之后,使用单个外延生长步骤形成抗引导层,从而形成无需抑制修改即可抑制不需要的高阶模的结构。用来制造激光二极管本身的特定工艺步骤。

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