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Wide-area laser including anti-guiding regions for higher lateral mode suppression

机译:包括反导区域的广域激光器,用于更高的横向模式抑制

摘要

The wide area laser diode 10 is configured to include anti-guiding layers 30, 60 located outside of the active region of the device. The anti-guiding layer is formed of a high index of refraction material that serves to separate unnecessary, higher order lateral modes (contributing to thermal lens problems) from the lower order mode output beam of the laser diode''s output signal. The anti-guiding layer is formed using a single epitaxial growth step before or after the steps used to grow the epitaxial layers forming the laser diode itself, and thus the specific process step used to manufacture the laser diode itself. It creates a structure that provides suppression of unnecessary higher order modes without requiring modification of these.
机译:广域激光二极管10被配置为包括位于器件的有源区域之外的抗引导层30、60。防引导层由高折射率材料形成,该材料用于将不必要的高阶横向模式(导致热透镜问题)与激光二极管输出信号的低阶模式输出光束分开。在用于生长形成激光二极管本身的外延层的步骤之前或之后,使用单个外延生长步骤来形成抗引导层,从而形成用于制造激光二极管本身的特定工艺步骤。它创建了一种结构,该结构可以抑制不必要的高阶模式,而无需对其进行修改。

著录项

  • 公开/公告号KR102046237B1

    专利类型

  • 公开/公告日2019-11-18

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20177035381

  • 申请日2016-06-14

  • 分类号H01S5/20;H01S5/22;H01S5/24;H01S5/34;

  • 国家 KR

  • 入库时间 2022-08-21 11:08:28

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