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Wide-area lasers including anti-guiding areas for high-order lateral mode suppression

机译:包括反导区域的广域激光器,用于抑制高阶横向模式

摘要

The wide area laser diode 10 is configured to include an anti-guiding layer 30, 60 located outside the active area of the device. The anti-guiding layer is formed of a high refractive index material that serves to separate unwanted, higher order lateral modes (which contribute to thermal lens problems) from the lower order mode output beam of the laser diode output signal. The anti-guiding layer is formed using a single epitaxial growth step before or after the steps used to grow the epitaxial layers that form the laser diode itself, and thus the specific process steps used to fabricate the laser diode itself Lt; RTI ID = 0.0 unnecessary / RTI
机译:广域激光二极管10被配置为包括位于装置的有源区域之外的抗引导层30、60。防引导层由高折射率材料形成,该材料用于将不需要的,较高阶的横向模式(有助于热透镜问题)与激光二极管输出信号的较低阶模式的输出光束分开。在用于生长形成激光二极管本身的外延层的步骤之前或之后,使用单个外延生长步骤形成抗引导层,因此,用于制造激光二极管本身的特定工艺步骤Lt; RTI ID = 0.0>不必要的

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