RUTILE-TYPE NIOBIUM OXYNITRIDE, METHOD FOR PRODUCING SAME, AND SEMICONDUCTOR STRUCTURE

摘要

The present disclosure provides a rutile-type niobium oxynitride having a rutile-type crystal structure and represented by the chemical formula NbON. The present disclosure also provides a semiconductor structure (100) comprising: a substrate (110) in which at least one principal surface is formed of a rutile-type compound having a rutile-type crystal structure; and a niobium oxynitride (for example, a rutile-type niobium oxynitride film (120)) grown on said one principal surface of the substrate (110), the niobium oxynitride having a rutile-type crystal structure and represented by the chemical formula NbON.