METHOD FOR MANUFACTURING BOTTOM WINDOW AT INSULATION LAYER OF THROUGH-SILICON VIA STRUCTURE AND THROUGH-SILICON VIA STRUCTURE

摘要

A method for manufacturing a bottom window at an insulation layer of a through-silicon via structure and a through-silicon via structure are provided. The method comprises: providing a wafer (1), where the wafer has a front surface and a rear surface, a through-silicon via structure is formed in the front surface, and several through-silicon via structures form a through-silicon via structure array; coating an encapsulating photoresist (2) on the surface of the through-silicon via structure; exposing and developing a photoresist part at a hole bottom of the through-silicon via structure, to form a pattern and expose the hole bottom; curing a remaining photoresist part, so as to form an insulation layer having a window structure at the hole bottom of the through-silicon via structure. It can be seen that in the method for manufacturing a bottom window at an insulation layer of a through-silicon via structure and the through-silicon via structure, a window is opened at the bottom of the insulation layer by means of a semiconductor photolithography process, which improves the efficiency of a conventional windowing manner of etching a silica insulation layer with plasma, and also avoids damage to devices due to a high temperature generated when a non-photosensitive polymer insulation layer is ablated using a laser, thereby achieving high stability, strong practicability, and low costs.