SILICON CARBIDE SINGLE CRYSTAL, SILICON CARBIDE SINGLE CRYSTAL WAFER, SILICON CARBIDE SINGLE CRYSTAL EPITAXIAL WAFER, ELECTRONIC DEVICE

摘要

In this silicon carbide single crystal, a threading dislocation (20) is present, whereof the dislocation line (21) traverses the c-plane while the Burgers vector (bv) has at least a component in the c-axis direction. Among the threading dislocations, the density is 300/cm² or less for the threading dislocations where the angle (θ1) formed by the Burgers vector and the direction of the dislocation line is greater than 0° and 40° or less, and the density is 30/cm² or less for the threading dislocations where the angle is greater than 40°.