METHOD FOR FORMING CVD-SiC LAYER AND CVD-SiC LAYER FORMED BY THE METHOD

摘要

A method for forming a CVD-SiC layer by a CVD method of precipitating a deposit on a substrate in a CVD furnace while supplying a raw material gas, wherein the CVD method is a photo CVD method of irradiating the substrate with a light beam and the layer-forming temperature (t [K] ) and the total pressure (p [kPa] ) satisfy the following formula (1) : p ≥ -0.04t + 72.