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NITROGEN CONTAINING SINGLE CRYSTAL DIAMOND MATERIALS OPTIMIZED FOR MAGNETOMETRY APPLICATIONS

机译:磁法应用中优化的含氮单晶金刚石材料

摘要

A single crystal diamond material comprising: neutral nitrogen-vacancy defects (NV0); negatively charged nitrogen-vacancy defects (NV-); and single substitutional nitrogen defects (Ns) which transfer their charge to the neutral nitrogen- vacancy defects (NV0) to convert them into the negatively charged nitrogen-vacancy defects (NV ), characterized in that the single crystal diamond material has a magnetometry figure of merit (FOM) of at least 2, wherein the magnetometry figure of merit is defined by (I) where R is a ratio of concentrations of negatively charged nitrogen-vacancy defects to neutral nitrogen-vacancy defects ([NV-]/[NV0]), [NV- ] is the concentration of negatively charged nitrogen- vacancy defects measured in parts-per-million (ppm) atoms of the single crystal diamond material, [NV0] is a concentration of neutral nitrogen-vacancy defects measured in parts-per-million (ppm) atoms of the single crystal diamond material, and T2' is a decoherence time of the NV- defects, where T2' is T2* for DC magnetometry or T2 for AC magnetometry.
机译:一种单晶金刚石材料,包括:中性氮空位缺陷(NV 0 );带负电荷的氮空位缺陷(NV -);和单个置换氮缺陷(N s ),它们将电荷转移到中性氮空位缺陷(NV 0 ),将其转换为带负电荷的氮空位缺陷( NV),其特征在于,单晶金刚石材料的磁特性因数(FOM)至少为2,其中磁特性因数由(I)定义,其中R是带负电荷的氮空位浓度的比率中性氮空位缺陷([NV -] / [NV 0 ])的缺陷,[NV -]是带负电荷的浓度以单晶金刚石材料的百万分之一(ppm)原子测量的氮空位缺陷,[NV0]是以单晶金刚石材料的百万分之一(ppm)原子测量的中性氮空位缺陷的浓度T 2 '是NV -缺陷的退相干时间,其中T 2 '是T 2 *用于直流磁力计或T 2 用于交流磁力计。

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