首页>
外国专利>
SYSTEMS AND METHODS FOR IN-SITU DOPED SEMICONDUCTOR GATE ELECTRODES FOR WIDE BANDGAP SEMICONDUCTOR POWER DEVICES
SYSTEMS AND METHODS FOR IN-SITU DOPED SEMICONDUCTOR GATE ELECTRODES FOR WIDE BANDGAP SEMICONDUCTOR POWER DEVICES
展开▼
机译:用于宽禁带半导体功率器件的原位掺杂半导体门电极的系统和方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
In an embodiment, a wide bandgap semiconductor power device, includes a wide bandgap semiconductor substrate layer; an epitaxial semiconductor layer disposed above the wide bandgap semiconductor substrate layer; a gate dielectric layer disposed directly over a portion of the epitaxial semiconductor layer; and a gate electrode disposed directly over the gate dielectric layer. The gate electrode includes an in-situ doped semiconductor layer disposed directly over the gate dielectric layer and a metal-containing layer disposed directly over the in-situ doped semiconductor layer.
展开▼