BA₃P₃O₁₀CL SINGLE CRYSTAL GROWTH METHOD AND CRYSTAL GROWTH DEVICE

摘要

A Ba₃P₃O₁₀Cl single crystal growth method and a crystal growth device. The crystal growth device comprises: a furnace body (2), a furnace body holder (11) for holding the furnace body (2) and a hearth located within the furnace body (2), the hearth comprising a high temperature region located at the upper end thereof and a low temperature region located at the lower end thereof. A lifting device is provided on the furnace body holder (11) to control the rise and fall of a crucible bar (6) located within the hearth, and thus control the reciprocal motion of raw materials to be heated in the high temperature region and the low temperature region. A Ba₃P₃O₁₀Cl single crystal of high quality and large size, which is able to meet the practical requirement of being at centimeter scale, is obtained from the method of the present invention, the size being about Φ10×50mm, and the transmittance in the ultraviolet-visible area being able to reach 90% or more. The crystal growth device has a novel and simple structure, and therefore cannot only be suitable for the growth of the Ba₃P₃O₁₀Cl single crystal but also be suitable for the crystal growth of a series of compounds that are easily oxidized, melt unevenly, or of which the decomposition temperature is lower than the melting point, and thus has broad application value.