COMPOUND RESIN BASE LAYER FILM-FORMING MATERIAL FOR LITHOGRAPHY BASE LAYER FILM FOR LITHOGRAPHY PATTERN-FORMING METHOD AND METHOD FOR REFINING COMPOUND OR RESIN

摘要

The compounds according to the present invention are represented by a specific formula. Since the compound has the structure according to the above formula, the compound according to the present invention is applicable to a wet process, and is excellent in heat resistance and etching resistance. In addition, since the compound according to the present invention has a specific structure, it has a high heat resistance, a relatively high carbon concentration, a relatively low oxygen concentration, and a high solvent solubility. Thus, by using the compound according to the present invention, deterioration of the film during high-temperature baking can be suppressed, and a lower layer film excellent in etching resistance against oxygen plasma etching and the like can be formed. Further, since the adhesion with the resist layer is also excellent, an excellent resist pattern can be formed.