CMP CMP COMPOSITIONS SELECTIVE FOR OXIDE OVER POLYSILICON AND NITRIDE WITH HIGH REMOVAL RATE AND LOW DEFECTIVITY

摘要

The present invention provides a chemical-mechanical polishing composition comprising a ceria abrasive and a polymer of Formula I, and water, and having a pH of from about 1 to about 4.5. The present invention further provides a method for chemically-mechanically polishing a substrate with the chemical-mechanical polishing composition of the present invention. Typically, the substrate contains silicon oxide, silicon nitride and / or polysilicon. (I) Wherein X ¹ and X ² , Y ¹ and Y ² , Z ¹ and Z ² , R ¹ , R ² , R ³ , and R ⁴ , and m are as defined herein.